The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2013
Filed:
Feb. 07, 2012
Applicants:
Tzung-fang Guo, Tainan, TW;
Jer-wei Chang, Tainan, TW;
Ten-chin Wen, Tainan, TW;
Inventors:
Assignee:
National Cheng Kung University, Tainan, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
Abstract
A field-effect transistor includes a gate electrode, a source electrode, a drain electrode, a semiconductor active layer, and a dielectric layer. The semiconductor active layer is connected to the source electrode and the drain electrode. The dielectric layer includes denatured albumen and is positioned between the gate electrode and the semiconductor active layer.
Guo, Tzung-Fang. (2013). Field-effect transistor with a dielectric layer having therein denatured albumen (U.S. Patent No. 8618534). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8618534
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile