The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2013
Filed:
Aug. 11, 2011
Haruyuki Sorada, Okayama, JP;
Takeki Ninomiya, Osaka, JP;
Takumi Mikawa, Shiga, JP;
Yukio Hayakawa, Kyoto, JP;
Haruyuki Sorada, Okayama, JP;
Takeki Ninomiya, Osaka, JP;
Takumi Mikawa, Shiga, JP;
Yukio Hayakawa, Kyoto, JP;
Panasonic Corporation, Osaka, JP;
Abstract
Provided are a nonvolatile memory device which can suppress non-uniformity in initial breakdown voltages among nonvolatile memory elements and prevent reduction of yield, and a manufacturing method thereof. The nonvolatile memory device includes a nonvolatile memory element () having a stacked-layer structure in which a resistance variable layer () is parallel to a main surface of a substrate () and is planarized, and a plug () electrically connected to either a first electrode () or a second electrode (), and an area of an end surface of a plug () at which the plug () and the nonvolatile memory element () are connected together, the end surface being parallel to the main surface of the substrate (), is greater than a cross-sectional area of a cross-section of a first transition metal oxide layer () which is an electrically-conductive region, the cross-section being parallel to the main surface of the substrate ().