The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 31, 2013

Filed:

Nov. 29, 2011
Applicants:

Yongzhi Song, Beijing, CN;

Zhaohui Hao, Beijing, CN;

Xu Wang, Beijing, CN;

Huiyue Luo, Beijing, CN;

Guojing MA, Beijing, CN;

Inventors:

Yongzhi Song, Beijing, CN;

Zhaohui Hao, Beijing, CN;

Xu Wang, Beijing, CN;

Huiyue Luo, Beijing, CN;

Guojing Ma, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract

A lifting-off method and a manufacturing method for a thin film transistor (TFT) array substrate using the same are provided. A lifting-off method comprises forming a cavitation jet flow by using a lifting-off solution, and impacting a to-be-lifted-off surface of a substrate by means of the cavitation jet flow to remove a photoresist and a film deposited on the photoresist over the to-be-lifted-off surface. The disclosure may be applied to manufacturing processes for semiconductor devices or TFT array substrate.


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