The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 31, 2013

Filed:

Apr. 25, 2006
Applicants:

Nathaniel R. Quick, Lake Mary, FL (US);

Aravinda Kar, Oviedo, FL (US);

Inventors:

Nathaniel R. Quick, Lake Mary, FL (US);

Aravinda Kar, Oviedo, FL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method is disclosed for making a high crystalline quality layer in a surface region of a wide bandgap material substrate. The high crystalline quality layer is formed by directing a thermal energy beam onto the wide bandgap material in the presence of a doping gas for converting a layer of the wide bandgap material into the high crystalline quality layer. Various electrical, optical and electro-optical components may be formed within the high crystalline quality layer through a further conversion process. In an alternative embodiment, the high crystalline quality layer may be embedded within the wide bandgap material.


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