The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2013
Filed:
Dec. 01, 2011
Takeshi Sakamoto, Shizuoka, JP;
Kenichi Muramatsu, Shizuoka, JP;
Takeshi Sakamoto, Shizuoka, JP;
Kenichi Muramatsu, Shizuoka, JP;
Hamamatsu Photonics K.K., Hamamatsu-shi, Shizuoka, JP;
Abstract
A laser processing method for preventing particles from occurring from cut sections of chips obtained by cutting a silicon wafer is provided. An irradiation condition of laser light L for forming modified regionstois made different from an irradiation condition of laser light L for forming the modified regionstosuch as to correct the spherical aberration of laser light L in areas where the depth from the front faceof a silicon waferis 335 μm to 525 μm. Therefore, even when the silicon waferand a functional device layerare cut into semiconductor chips from modified regionstoacting as a cutting start point, twist hackles do not appear remarkably in the areas where the depth is 335 μm to 525 μm, whereby particles are hard to occur.