The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 31, 2013

Filed:

Sep. 28, 2010
Applicants:

Young Pil Kim, Eden Prairie, MN (US);

Hyung-kew Lee, Edina, MN (US);

Peter Nicholas Manos, Eden Prairie, MN (US);

Chulmin Jung, Eden Prairie, MN (US);

Maroun Georges Khoury, Burnsville, MN (US);

Dadi Setiadi, Edina, MN (US);

Inventors:

Young Pil Kim, Eden Prairie, MN (US);

Hyung-Kew Lee, Edina, MN (US);

Peter Nicholas Manos, Eden Prairie, MN (US);

Chulmin Jung, Eden Prairie, MN (US);

Maroun Georges Khoury, Burnsville, MN (US);

Dadi Setiadi, Edina, MN (US);

Assignee:

Seagate Technology LLC, Cupertino, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method includes providing a semiconductor wafer having a plurality of pillar structures extending orthogonally from the semiconductor wafer. Each pillar structure forms a vertical pillar transistor having a top surface and a side surface orthogonal to the top surface. Then a hardening species is implanted into the vertical pillar transistor top surface. Then the vertical pillar transistor side surface is oxidized to form a side surface oxide layer. The side surface oxide layer is removed to form vertical pillar transistor having rounded side surfaces.


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