The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2013
Filed:
Apr. 03, 2012
Bong Jin Kuh, Suwon-si, KR;
Jong Cheol Lee, Seoul, KR;
Yong Suk Tak, Seoul, KR;
Young Sub You, Suwon-si, KR;
Kyu Ho Cho, Hwaseong-si, KR;
Jong Sung Lim, Seoul, KR;
Bong Jin Kuh, Suwon-si, KR;
Jong Cheol Lee, Seoul, KR;
Yong Suk Tak, Seoul, KR;
Young Sub You, Suwon-si, KR;
Kyu Ho Cho, Hwaseong-si, KR;
Jong Sung Lim, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A capacitor is fabricated by forming a mold layer of a silicon based material that is not an oxide of silicon, e.g., polysilicon or doped polysilicon, on a substrate, forming an opening through the mold layer, forming a barrier layer pattern along the sides of the opening, subsequently forming a lower electrode in the opening, then removing the mold layer and the barrier layer pattern, and finally sequentially forming dielectric layer and an upper electrode on the lower electrode.