The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2013
Filed:
Jun. 21, 2012
Masaki Yanagisawa, Yokohama, JP;
Masaki Yanagisawa, Yokohama, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
A method for manufacturing a semiconductor laser includes the steps of preparing a mold with a pattern surface having recesses, forming a stacked semiconductor layer including a grating layer, forming a resin part on the grating layer, forming a resin pattern portion on the resin part, forming a diffraction grating by etching the grating layer using the resin part as a mask, and forming a mesa-structure on the stacked semiconductor layer. Each of the recesses includes two end portions and a middle portion between the two end portions. A depth of at least one of the two end portions from the pattern surface is greater than that of the middle portion. The step of forming the mesa-structure includes the step of etching the stacked semiconductor layer so as to remove end portions of the diffraction grating in a direction orthogonal to a periodic direction thereof.