The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2013
Filed:
Oct. 18, 2011
Hamid Balamane, Portola Valley, CA (US);
Patrick M. Braganca, San Jose, CA (US);
Jordan A. Katine, Mountain View, CA (US);
Jui-lung LI, San Jose, CA (US);
Yang LI, San Jose, CA (US);
Kanaiyalal C. Patel, Fremont, CA (US);
Neil L. Robertson, Palo Alto, CA (US);
Samuel W. Yuan, Saratoga, CA (US);
Hamid Balamane, Portola Valley, CA (US);
Patrick M. Braganca, San Jose, CA (US);
Jordan A. Katine, Mountain View, CA (US);
Jui-Lung Li, San Jose, CA (US);
Yang Li, San Jose, CA (US);
Kanaiyalal C. Patel, Fremont, CA (US);
Neil L. Robertson, Palo Alto, CA (US);
Samuel W. Yuan, Saratoga, CA (US);
HGST Netherlands B.V., Amsterdam, NL;
Abstract
A method for manufacturing a magnetic read sensor at very narrow track widths. The method uses an amorphous carbon mask layer to pattern the sensor by ion milling, rather than a mask constructed of a material such as photoresist or DURIMIDE® which can bend over during ion milling at very narrow track widths. By using the amorphous carbon layer as the masking layer, the trackwidth can be very small, while avoiding this bending over of the mask that has been experienced with prior art methods. In addition, the track-width can be further reduced by using a reactive ion etching to further reduce the width of the amorphous carbon mask prior to patterning the sensor. The method also allows extraneous portions of the side insulation layer and hard bias layer to be removed above the sensor by a light CMP process.