The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2013
Filed:
Jul. 12, 2012
James S. Im, New York, NY (US);
Paul C. Van Der Wilt, New York, NY (US);
James S. Im, New York, NY (US);
Paul C. Van Der Wilt, New York, NY (US);
The Trustees of Columbia University in the City of New York, New York, NY (US);
Abstract
A system for preparing a semiconductor film, the system including: a laser source; optics to form a line beam, a stage to support a sample capable of translation; memory for storing a set of instructions, the instructions including irradiating a first region of the film with a first laser pulse to form a first molten zone, said first molten zone having a maximum width (W) and a minimum width (W), wherein the first molten zone crystallizes to form laterally grown crystals; laterally moving the film in the direction of lateral growth a distance greater than about one-half Wand less than W; and irradiating a second region of the film with a second laser pulse to form a second molten zone, wherein the second molten zone crystallizes to form laterally grown crystals that are elongations of the crystals in the first region, wherein laser optics provide Wless than 2×W.