The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 31, 2013

Filed:

Nov. 29, 2011
Applicants:

Yongchul Ahn, San Jose, CA (US);

Xiaozhong Dang, Fremont, CA (US);

Quang Le, San Jose, CA (US);

Simon H. Liao, Fremont, CA (US);

Inventors:

Yongchul Ahn, San Jose, CA (US);

Xiaozhong Dang, Fremont, CA (US);

Quang Le, San Jose, CA (US);

Simon H. Liao, Fremont, CA (US);

Assignee:

HGST Netherlands B.V., Amsterdam, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11B 5/127 (2006.01); H04R 31/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for manufacturing a magnetic sensor that includes depositing a plurality of mask layers, then forming a stripe height defining mask over the sensor layers. A first ion milling is performed just sufficiently to remove portions of the free layer that are not protected by the stripe height defining mask, the first ion milling being terminated at the non-magnetic barrier or spacer layer. A dielectric layer is then deposited, preferably by ion beam deposition. A second ion milling is then performed to remove portions of the pinned layer structure that are not protected by the mask, the free layer being protected during the second ion milling by the dielectric layer.


Find Patent Forward Citations

Loading…