The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2013
Filed:
Dec. 07, 2011
Hiromitsu Tanabe, Nukata-gun, JP;
Yukio Tsuzuki, Nukata-gun, JP;
Kenji Kouno, Gifu, JP;
Tomofusa Shiga, Nukata-gun, JP;
Hiromitsu Tanabe, Nukata-gun, JP;
Yukio Tsuzuki, Nukata-gun, JP;
Kenji Kouno, Gifu, JP;
Tomofusa Shiga, Nukata-gun, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
An insulated gate semiconductor device includes a first conductivity-type semiconductor substrate, a second conductivity-type base layer on a first surface side of the substrate, a trench dividing the base layer into channel and floating layers, and a first conductivity-type emitter region that is formed in the channel layer and in contact with the trench. The semiconductor device includes a gate insulation layer in the trench, a gate electrode on the insulation layer, an emitter electrode electrically connected to the emitter region and the floating layer, a second conductivity-type collector layer in the substrate, and a collector electrode on the collector layer. The floating layer has a lower impurity concentration than the channel layer. The floating layer has a first conductivity-type hole stopper layer located at a predetermined depth from the first surface of the substrate and at least partially spaced from the insulation layer.