The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2013
Filed:
Dec. 30, 2011
Hyun Jin Lee, Seongnam-si, KR;
Hyun Jin Lee, Seongnam-si, KR;
Hynix Semiconductor Inc., Icheon, KR;
Abstract
A semiconductor device and a method for fabricating the same are provided which can increase the effective channel area and maintain a transistor characteristic. Since the semiconductor device comprises a recess filled with a gate spacer, a gate threshold voltage can be maintained even though the ion-implanting concentration of the active region is not uniform. The semiconductor device comprises: a device isolation film that defines an active region formed over a semiconductor substrate; a line-type recess with a given depth formed to be extended along a first direction to intersect at the active region; and a gate formed to be extended along a second direction to intersect at the active region, wherein a spacer including a high K material is disposed at sidewalls.