The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2013
Filed:
Jul. 03, 2012
Jun Wang, Bethlehem, PA (US);
Shuming Xu, Schnecksville, PA (US);
Jacek Korec, Sunrise, FL (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A power MOSFET is formed in a semiconductor device with a parallel combination of a shunt resistor and a diode-connected MOSFET between a gate input node of the semiconductor device and a gate of the power MOSFET. A gate of the diode-connected MOSFET is connected to the gate of the power MOSFET. Source and drain nodes of the diode-connected MOSFET are connected to a source node of the power MOSFET through diodes. The drain node of the diode-connected MOSFET is connected to the gate input node of the semiconductor device. The source node of the diode-connected MOSFET is connected to the gate of the power MOSFET. The power MOSFET and the diode-connected MOSFET are integrated into the substrate of the semiconductor device so that the diode-connected MOSFET source and drain nodes are electrically isolated from the power MOSFET source node through a pn junction.