The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2013
Filed:
Dec. 31, 2012
Spansion Llc, Sunnyvale, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Minh Van Ngo, Fremont, CA (US);
Hirokazu Tokuno, Cupertino, CA (US);
Angela T. Hui, Fremont, CA (US);
Wenmei Li, Sunnyvale, CA (US);
Hsiao-Han Thio, Santa Clara, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Advanced Mirco Devices, Inc., Sunnyvale, CA (US);
Abstract
A method of manufacturing a non-volatile memory device includes forming a number of memory cells. The method also includes depositing a first dielectric layer over the memory cells, where the first dielectric layer is a conformal layer having a substantially uniform thickness. The method further includes depositing a second dielectric layer over the first dielectric layer. Together, the first and second dielectric layers form an interlayer dielectric without voids.