The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2013
Filed:
Feb. 11, 2011
Applicants:
Satoshi Takesako, Yokohama, JP;
Naoki Idani, Yokohama, JP;
Inventors:
Satoshi Takesako, Yokohama, JP;
Naoki Idani, Yokohama, JP;
Assignee:
Fujitsu Semiconductor Limited, Yokohama, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device manufacture method includes: forming an insulating film above a semiconductor substrate; etching the insulating film to form a dummy groove having a first depth, a wiring groove having a second depth deeper than the first depth, and a via hole to be disposed on a bottom of the wiring groove; depositing a conductive material in the dummy groove, wiring groove and via hole and above the insulating film; and polishing and removing the conductive material above the insulating film.