The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2013
Filed:
Oct. 29, 2010
Lawrence A. Clevenger, Austin, TX (US);
Harold J. Hovel, Austin, TX (US);
Rainer Klaus Krause, Kostheim, DE;
Kevin S. Petrarca, Austin, TX (US);
Gerd Pfeiffer, Austin, TX (US);
Kevin M. Prettyman, Austin, TX (US);
Carl Radens, Austin, TX (US);
Brian C. Sapp, Austin, TX (US);
Lawrence A. Clevenger, Austin, TX (US);
Harold J. Hovel, Austin, TX (US);
Rainer Klaus Krause, Kostheim, DE;
Kevin S. Petrarca, Austin, TX (US);
Gerd Pfeiffer, Austin, TX (US);
Kevin M. Prettyman, Austin, TX (US);
Carl Radens, Austin, TX (US);
Brian C. Sapp, Austin, TX (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for manufacturing a photovoltaic solar cell device includes the following. A p-n junction having a first doping density is formed. Formation of the p-n junction is enhanced by introducing a second doping density to form high doped areas for a dual emitter application. The high doped areas are defined by a masking process integrated with the formation of the p-n junction, resulting in a mask pattern of the high doped areas. A metallization of the high doped areas occurs in accordance with the mask pattern of the high doped areas.