The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2013
Filed:
Sep. 22, 2011
Yu-jin Ahn, Seongnam-si, KR;
Duck-hyung Lee, Seongnam-si, KR;
Jong-cheol Shin, Hwaseong-si, KR;
Chang-rok Moon, Seoul, KR;
Sang-jun Choi, Yongin-si, KR;
Eun-kyung Park, Seoul, KR;
Yu-Jin Ahn, Seongnam-si, KR;
Duck-Hyung Lee, Seongnam-si, KR;
Jong-Cheol Shin, Hwaseong-si, KR;
Chang-Rok Moon, Seoul, KR;
Sang-Jun Choi, Yongin-si, KR;
Eun-Kyung Park, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
An image sensor and a method for fabricating the image sensor are provided. The method for fabricating the image sensor includes forming a first insulating layer on a semiconductor epitaxial layer having multiple pixel regions; patterning a portion of the semiconductor epitaxial layer and the first insulating layer in a boundary region between the pixel regions to form a trench; forming a buried insulating layer on the first insulating layer, filling the trench, the buried insulating layer having a planar top surface; forming a second insulating layer on the buried insulating layer; forming a first mask pattern on the second insulating layer, the first mask pattern defining an opening overlapping the trench; and performing an ion implantation process using the first mask pattern as an ion implantation mask to form a first type potential barrier region in a bottom of the trench.