The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 24, 2013

Filed:

Sep. 29, 2011
Applicants:

Aref Chowdhury, Berkeley Heights, NJ (US);

Hock NG, Westfield, NJ (US);

Richart Elliott Slusher, Lebanon, NJ (US);

Inventors:

Aref Chowdhury, Berkeley Heights, NJ (US);

Hock Ng, Westfield, NJ (US);

Richart Elliott Slusher, Lebanon, NJ (US);

Assignee:

Alcatel Lucent, Paris, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C25F 3/00 (2006.01); C23F 1/00 (2006.01); C03C 15/00 (2006.01); C03C 25/68 (2006.01); H01L 21/302 (2006.01); H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract

A fabrication method produces a mechanically patterned layer of group III-nitride. The method includes providing a crystalline substrate and forming a first layer of a first group III-nitride on a planar surface of the substrate. The first layer has a single polarity and also has a pattern of holes or trenches that expose a portion of the substrate. The method includes then, epitaxially growing a second layer of a second group III-nitride over the first layer and the exposed portion of substrate. The first and second group III-nitrides have different alloy compositions. The method also includes subjecting the second layer to an aqueous solution of base to mechanically pattern the second layer.


Find Patent Forward Citations

Loading…