The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2013
Filed:
Jan. 20, 2010
Issei Satoh, Itami, JP;
Michimasa Miyanaga, Osaka, JP;
Yoshiyuki Yamamoto, Itami, JP;
Hideaki Nakahata, Itami, JP;
Issei Satoh, Itami, JP;
Michimasa Miyanaga, Osaka, JP;
Yoshiyuki Yamamoto, Itami, JP;
Hideaki Nakahata, Itami, JP;
Sumitomo Electric Industies, Ltd., Osaka, JP;
Abstract
Affords nitride semiconductor crystal manufacturing apparatuses that are durable and that are for manufacturing nitride semiconductor crystal in which the immixing of impurities from outside the crucible is kept under control, and makes methods for manufacturing such nitride semiconductor crystal, and the nitride semiconductor crystal itself, available. A nitride semiconductor crystal manufacturing apparatus () is furnished with a crucible (), a heating unit (), and a covering component (). The crucible () is where, interiorly, source material () is disposed. The heating unit () is disposed about the outer periphery of the crucible (), where it heats the crucible () interior. The covering component () is arranged in between the crucible () and the heating unit (). The covering component () includes a first layer () formed along the side opposing the crucible (), and made of a metal whose melting point is higher than that of the source material (), and a second layer () formed along the outer periphery of the first layer (), and made of a carbide of the metal that constitutes the first layer ().