The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2013
Filed:
Mar. 30, 2012
Weijie Wang, Singapore, SG;
Rong Zhao, Singapore, SG;
Kok Leong Desmond Loke, Singapore, SG;
Luping Shi, Singapore, SG;
Minghua LI, Singapore, SG;
Weijie Wang, Singapore, SG;
Rong Zhao, Singapore, SG;
Kok Leong Desmond Loke, Singapore, SG;
Luping Shi, Singapore, SG;
Minghua Li, Singapore, SG;
Agency for Science, Technology and Research, Singapore, SG;
Abstract
A method for programming a resistive memory cell is provided. The method may include providing a programming signal to the resistive memory cell. The programming signal may include an electrical pulse and a bias pulse coupled with the electrical pulse. The electrical pulse includes an electrical pulse portion, and the bias pulse includes at least two bias pulse portions, wherein the electrical pulse portion is positioned between the at least two bias pulse portions. The bias pulse includes a voltage below a threshold switching voltage of the resistive memory cell. The programming signal includes a peak voltage above the threshold switching voltage of the resistive memory cell.