The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2013
Filed:
Jan. 09, 2012
Seong-ook Jung, Seoul, KR;
Jisu Kim, Seoul, KR;
Youngdon Jung, Seoul, KR;
Jung Pill Kim, San Diego, CA (US);
Seung H. Kang, San Diego, CA (US);
Seong-Ook Jung, Seoul, KR;
Jisu Kim, Seoul, KR;
Youngdon Jung, Seoul, KR;
Jung Pill Kim, San Diego, CA (US);
Seung H. Kang, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Industry-Academic Cooperation Foundation, Yonsei University, Seoul, KR;
Abstract
A resistance based memory sensing circuit has reference current transistors feeding a reference node and a read current transistor feeding a sense node, each transistor has a substrate body at a regular substrate voltage during a stand-by mode and biased during a sensing mode at a body bias voltage lower than the regular substrate voltage. In one option the body bias voltage is determined by a reference voltage on the reference node. The substrate body at the regular substrate voltage causes the transistors to have a regular threshold voltage, and the substrate body at the body bias voltage causes the transistors to have a sense mode threshold voltage, lower than the regular threshold voltage.