The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2013
Filed:
Oct. 31, 2011
Phaedon Avouris, Yorktown Heights, NY (US);
Mathias B. Steiner, Croton-on-Hudson, NY (US);
Michael Engel, Karlsruhe, DE;
Ralph Krupke, Stuttensee, DE;
Andrea C. Ferrari, Cambridge, GB;
Antonio Lombardo, Cambridge, GB;
Phaedon Avouris, Yorktown Heights, NY (US);
Mathias B. Steiner, Croton-on-Hudson, NY (US);
Michael Engel, Karlsruhe, DE;
Ralph Krupke, Stuttensee, DE;
Andrea C. Ferrari, Cambridge, GB;
Antonio Lombardo, Cambridge, GB;
International Business Machines Corporation, Armonk, NY (US);
Karlsruher Institut Fuer Technologie (KIT), , DE;
Cambridge Enterprise Limited, , GB;
Abstract
A microcavity-controlled two-dimensional carbon lattice structure device selectively modifies to reflect or to transmit, or emits, or absorbs, electromagnetic radiation depending on the wavelength of the electromagnetic radiation. The microcavity-controlled two-dimensional carbon lattice structure device employs a graphene layer or at least one carbon nanotube located within an optical center of a microcavity defined by a pair of partial mirrors that partially reflect electromagnetic radiation. The spacing between the mirror determines the efficiency of elastic and inelastic scattering of electromagnetic radiation inside the microcavity, and hence, determines a resonance wavelength of electronic radiation that is coupled to the microcavity. The resonance wavelength is tunable by selecting the dimensional and material parameters of the microcavity. The process for manufacturing this device is compatible with standard complementary metal oxide semiconductor (CMOS) manufacturing processes.