The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2013
Filed:
Jun. 12, 2008
Bernd Wildpanner, Dresden, DE;
Hilmar Von Campe, Bad Homburg, DE;
Werner Buss, Hanau, DE;
Schott Solar AG, Mainz, DE;
Abstract
A semiconductor component including a first layer () of a semiconductor material as a substrate, a second layer () running on said first layer (), and at least two intermediate layers () made of the materials of the first and second layers running between the first and second layer, where the first intermediate layer () facing the second layer () may contain a eutectic mixture () made of the materials of the first and second layers. The invention is also directed to an electroconductive contact () forming an electroconductive connection to the first layer and originating at or running through the second layer, as well as to a method for producing the metal-semiconductor contact. In order to produce a mechanically durable, electrically flawless, removable contact in the area of the material of the second layer it is proposed that the electroconductive contact () include a solderable or wettable metallic material, which is alloyed into the second layer () or which forms a mixture with the material of the second layer.