The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2013
Filed:
Jul. 16, 2009
Shigeru Saitou, Osaka, JP;
Keisuke Tanaka, Toyama, JP;
Kimiaki Toshikiyo, Osaka, JP;
Yutaka Hirose, Kyoto, JP;
Motonori Ishii, Osaka, JP;
Shigeru Saitou, Osaka, JP;
Keisuke Tanaka, Toyama, JP;
Kimiaki Toshikiyo, Osaka, JP;
Yutaka Hirose, Kyoto, JP;
Motonori Ishii, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A solid-state image sensor having a configuration which reduces increases in light-collection loss and light mixing due to an increase in the angle of light entering into a waveguide path during oblique incidence and which is effective for sensitivity improvement includes: an Si substrate; unit-pixels arranged on the Si substrate; a wiring layer formed on the unit-pixels; optical waveguide regions each formed on a photoelectric conversion region included in a corresponding one of the unit-pixels, and penetrating the wiring layer; and light-collecting elements each formed above a corresponding one of the optical waveguide regions, wherein each of the light-collecting elements is a gradient index microlens having an effective refractive index distribution.