The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2013
Filed:
Nov. 11, 2010
Masao Moriguchi, Osaka, JP;
Yohsuke Kanzaki, Osaka, JP;
Tsuyoshi Inoue, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
Disclosed is a photosensor element that is provided with a gate electrode () disposed on an insulating substrate (), a gate insulation film () disposed so as to cover the gate electrode (), a semiconductor layer () disposed on the gate insulating film () so as to overlap the gate electrode (), and a source electrode () and a drain electrode () provided on the semiconductor layer () so as to overlap the gate electrode () and so as to face each other. The semiconductor layer () is provided with an intrinsic semiconductor layer () in which a channel region (C) is defined and an extrinsic semiconductor layer () that is laminated on the intrinsic semiconductor layer () such that the channel region (C) is exposed therefrom. The intrinsic semiconductor layer () is an amorphous silicon layer containing nanocrystalline silicon particles.