The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2013
Filed:
Jul. 20, 2010
Hiroshi Ohta, Hyogo-ken, JP;
Yasuto Sumi, Hyogo-ken, JP;
Kiyoshi Kimura, Hyogo-ken, JP;
Wataru Sekine, Ishikawa-ken, JP;
Wataru Saito, Kanagawa-ken, JP;
Syotaro Ono, Kanagawa-ken, JP;
Munehisa Yabuzaki, Hyogo-ken, JP;
Nana Hatano, Kanagawa-ken, JP;
Miho Watanabe, Tokyo, JP;
Hiroshi Ohta, Hyogo-ken, JP;
Yasuto Sumi, Hyogo-ken, JP;
Kiyoshi Kimura, Hyogo-ken, JP;
Wataru Sekine, Ishikawa-ken, JP;
Wataru Saito, Kanagawa-ken, JP;
Syotaro Ono, Kanagawa-ken, JP;
Munehisa Yabuzaki, Hyogo-ken, JP;
Nana Hatano, Kanagawa-ken, JP;
Miho Watanabe, Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a power semiconductor device includes a first semiconductor layer, and first, second and third semiconductor regions. The first semiconductor layer has a first conductivity type. The first semiconductor regions have a second conductivity type, and are formed with periodicity in a lateral direction in a second semiconductor layer of the first conductivity type. The second semiconductor layer is provided on a major surface of the first semiconductor layer in a device portion with a main current path formed in a vertical direction generally perpendicular to the major surface and in a terminal portion provided around the device portion. The second semiconductor region has the first conductivity type and is a portion of the second semiconductor layer sandwiched between adjacent ones of the first semiconductor regions. The third semiconductor regions have the second conductivity type and are provided below the first semiconductor regions in the terminal portion.