The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 17, 2013

Filed:

Dec. 08, 2009
Applicants:

Philippe Bois, Cesson, FR;

Olivier Parillaud, Gif sur Yvette, FR;

Xavier Marcadet, Palaiseau, FR;

Michel Papuchon, Villebon/Yvette, FR;

Inventors:

Philippe Bois, Cesson, FR;

Olivier Parillaud, Gif sur Yvette, FR;

Xavier Marcadet, Palaiseau, FR;

Michel Papuchon, Villebon/Yvette, FR;

Assignee:

Thales, Neuilly sur Seine, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/072 (2012.01); H01L 31/109 (2006.01); H01L 31/0328 (2006.01); H01L 31/0336 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor-based SWIR infrared detector sensitive to wavelengths shorter than about 2.5 microns comprises a stack of semiconductor layers based on III-V materials forming a PIN photodiode. The stack includes a naked electrical contact, called a lower electrical contact, serving as an optical window; and a detection layer sensitive to said wavelengths. The lower contact comprises at least one layer of indirect-bandgap III-V material(s) doped n-type, pseudomorphic or lattice matched with a substrate intended to serve as a temporary substrate possibly being made of a III-V material such as InP or GaAs or of silicon or germanium.


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