The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2013
Filed:
Jan. 11, 2011
Katsuhiko Nishida, Tsukuba, JP;
Mutsuo Ogura, Tsukuba, JP;
Katsuhiko Nishida, Tsukuba, JP;
Mutsuo Ogura, Tsukuba, JP;
Irspec Corporation, Tsukuba-shi, JP;
Abstract
An array structure solves issues that exist in conventional compound semiconductor photodiode arrays, such as large cross talk, large surface leaks, large stray capacitance, narrow detection wavelength bands, and bad manufacturing yield, simultaneously. A photodiode array has, laminated upon a semiconductor substrate, a buffer layer () with a broad forbidden band width, an I-type (low concentration photosensitive layer () with a narrow forbidden band width, and an n-type semiconductor window layer () with a broad forbidden band width, wherein photodiode elements are electrically separated from adjacent elements, by doping the periphery of the p-type impurity, and the detection wavelength band is expanded, by making the n-type window layer () on the photosensitive layer () a thinner layer with crystal growth.