The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8610167 B1

PDF
Full Text
Expired
Date of Patent:
Dec. 17, 2013

Filed:

Sep. 29, 2009
Applicants:

Miki Moriyama, Aichi, JP;

Koichi Goshonoo, Aichi, JP;

Inventors:

Miki Moriyama, Aichi, JP;

Koichi Goshonoo, Aichi, JP;

Assignee:

Toyoda Gosei Co., Ltd., Nishikasugai-Gun, Aichi-Ken, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/02 (2010.01);
U.S. Cl.
CPC ...
Abstract

An n-type layer of a light-emitting device has a structure in which a first n-type layer, a second n-type layer and a third n-type layer are sequentially laminated in this order on a sapphire substrate, and an n-electrode composed of V/Al is formed on the second n-type layer. The first n-type layer and the second n-type layer are n-GaN, and the third n-type layer is n-InGaN. The n-type impurity concentration of the second n-type layer is higher than that of the first n-type layer and the third n-type layer.


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