The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2013
Filed:
Oct. 14, 2011
Ken Nakahara, Kyoto, JP;
Shunsuke Akasaka, Kyoto, JP;
Koki Sakamoto, Kyoto, JP;
Tetsuo Fujii, Kyoto, JP;
Shunsuke Furuse, Kyoto, JP;
Soichiro Arimura, Kyoto, JP;
Ken Nakahara, Kyoto, JP;
Shunsuke Akasaka, Kyoto, JP;
Koki Sakamoto, Kyoto, JP;
Tetsuo Fujii, Kyoto, JP;
Shunsuke Furuse, Kyoto, JP;
Soichiro Arimura, Kyoto, JP;
Rohm Co., Ltd., Kyoto, JP;
Abstract
Two light receiving elements are formed on a support substrate. A first light receiving element is formed of a p-type layer, an n-type layer, a light absorption semiconductor layer, an anode electrode, a cathode electrode, a protection film, etc. A second light receiving element is formed of a p-type layer, an n-type layer, a transmissive film, an anode electrode, a cathode electrode, a protection film, etc. The light absorption semiconductor layer absorbs light in a wavelength range λ and disposed closer to the light receiving surface than is the pn junction region. The transmissive film has no light absorption range and disposed closer to the light receiving surface than is the pn junction region. The amount of light in the wavelength range λ is measured through computation using a detection signal from the first light receiving element and a detection signal from the second light receiving element.