The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2013
Filed:
Nov. 09, 2009
Toshihiko Fukamachi, Kokubunji, JP;
Takashi Shiota, Saitama, JP;
Takeshi Kitatani, Hino, JP;
Nozomu Yasuhara, Yokohama, JP;
Atsushi Nakamura, Komoro, JP;
Mitsuhiro Sawada, Yokohama, JP;
Toshihiko Fukamachi, Kokubunji, JP;
Takashi Shiota, Saitama, JP;
Takeshi Kitatani, Hino, JP;
Nozomu Yasuhara, Yokohama, JP;
Atsushi Nakamura, Komoro, JP;
Mitsuhiro Sawada, Yokohama, JP;
Oclaro Japan, Inc., Yokohama-shi, JP;
Abstract
Provided is a semiconductor electroluminescent device with an InGaAlAs-based well layer having tensile strain, or a semiconductor electroluminescent device with an InGaAsP-based well layer having tensile strain and with an InGaAlAs-based barrier layer which is high-performance and highly reliable in a wide temperature range. In a multiple-quantum well layer of the semiconductor electroluminescent device, a magnitude of interface strain at an interface between the well layer and the barrier layer is smaller than a magnitude of critical interface strain determined by a layer thickness value which is larger one of a thickness of the well layer and a thickness of the barrier layer.