The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2013
Filed:
Dec. 23, 2011
Applicant:
Sung Koo Lee, Seoul, KR;
Inventor:
Sung Koo Lee, Seoul, KR;
Assignee:
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for fabricating a semiconductor device, comprising forming a first photoresist pattern having a hole on a first layer, forming a surface curing layer in the hole and curing the first photoresist pattern on an inner sidewall of the hole to form a first curing pattern, removing the surface curing layer, forming a second photoresist pattern in the hole and curing the second photoresist pattern that contacts with the first curing pattern to form a second curing pattern, removing the first and second photoresist patterns, and etching the first layer using the first and second curing patterns as an etch barrier.