The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2013
Filed:
Oct. 17, 2011
Jong-won Lim, Daejeon, KR;
Hokyun Ahn, Daejeon, KR;
Dong Min Kang, Daejeon, KR;
Woojin Chang, Daejeon, KR;
Hae Cheon Kim, Daejeon, KR;
Eun Soo Nam, Daejeon, KR;
Jong-Won Lim, Daejeon, KR;
Hokyun Ahn, Daejeon, KR;
Dong Min Kang, Daejeon, KR;
Woojin Chang, Daejeon, KR;
Hae Cheon Kim, Daejeon, KR;
Eun Soo Nam, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
Disclosed are a semiconductor device and a method of manufacturing the same. In the semiconductor device according to an exemplary embodiment of the present disclosure, at the time of forming a source electrode, a drain electrode, a field plate electrode, and a gate electrode on a substrate having a heterojunction structure such as AlGaN/GaN, the field plate electrode made of the same metal as the gate electrode is formed on the side surface of a second support part positioned below a head part of the gate electrode so as to prevent the gate electrode from collapsing and improve high-frequency and high-voltage characteristic of the semiconductor device.