The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 10, 2013

Filed:

Apr. 30, 2008
Applicants:

Gregory J. Kovacs, Webster, NY (US);

Ashish Pattekar, Cupertino, CA (US);

David Biegelsen, Portola Valley, CA (US);

Lars E. Swartz, Sunnyvale, CA (US);

Guerino G. Sacripante, Oakville, CA;

T. Brian Mcaneney, Burlington, CA;

Edward G. Zwartz, Mississauga, CA;

Inventors:

Gregory J. Kovacs, Webster, NY (US);

Ashish Pattekar, Cupertino, CA (US);

David Biegelsen, Portola Valley, CA (US);

Lars E. Swartz, Sunnyvale, CA (US);

Guerino G. Sacripante, Oakville, CA;

T. Brian McAneney, Burlington, CA;

Edward G. Zwartz, Mississauga, CA;

Assignees:

Xerox Corporation, Norwalk, unknown;

Palo Alto Research Center Incorporated, Palo Alto, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03G 15/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

A system for heated gas fusing of toner on non-porous substrates is provided. The system uses (1) an extended fusing zone held at lower temperatures than needed for a roll nip or radiant fuser, and (2) a very low melt toner which can be fused at greatly reduced temperatures compared to conventional toners. In one form, the system is realized through (a) the use of heated gas as the low temperature extended zone fusing technology, and (b) the use of ultra-low melt (ULM) toner—which requires significantly reduced temperature compared to conventional toner. On non-porous packaging substrates the use of heated gas can limit the substrate temperature to 100° C.


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