The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2013
Filed:
Apr. 28, 2010
Takahiro Senda, Osaka, JP;
Takahiro Senda, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
TFTsandand the organic EL deviceare provided between a power line Vp and a common cathode Vcom, and a capacitorand a TFTare provided between a gate of the TFTand a data line Sj. A TFTis provided between the gate and a drain of the TFT, a TFTis provided between an anode terminal of the organic EL deviceand the common cathode Vcom, and a TFTis provided between one electrode of the capacitorand the power line Vp. Gates of the TFTstoare connected to a scanning line Gi, and gates of the TFTsandare connected to a scanning line Ei. When writing, a high potential is supplied to the scanning line Gi, and a low potential is supplied to the scanning line Ei a little after this. While the high potentials are supplied to the two scanning lines, the data line Sj is controlled to be in a high impedance state. In this manner, a pixel circuit configured by N-type transistors is driven using two types of scanning lines.