The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2013
Filed:
Mar. 01, 2011
Hiroki Wakimoto, Matsumoto, JP;
Kenichi Iguchi, Matsumoto, JP;
Koh Yoshikawa, Matsumoto, JP;
Tsunehiro Nakajima, Matsumoto, JP;
Shunsuke Tanaka, Matsumoto, JP;
Masaaki Ogino, Matsumoto, JP;
Hiroki Wakimoto, Matsumoto, JP;
Kenichi Iguchi, Matsumoto, JP;
Koh Yoshikawa, Matsumoto, JP;
Tsunehiro Nakajima, Matsumoto, JP;
Shunsuke Tanaka, Matsumoto, JP;
Masaaki Ogino, Matsumoto, JP;
Fuji Electric Co., Ltd., Kawasaki-Shi, JP;
Abstract
Some embodiments of the present invention relate to a semiconductor device and a method of manufacturing a semiconductor device capable of preventing the deterioration of electrical characteristics. A p-type collector region is provided on a surface layer of a backside surface of an n-type drift region. A p-type isolation layer for obtaining reverse blocking capability is provided at the end of an element. In addition, a concave portion is provided so as to extend from the backside surface of the n-type drift region to the p-type isolation layer. A p-type region is provided and is electrically connected to the p-type isolation layer. The p-type isolation layer is provided so as to include a cleavage plane having the boundary between the bottom and the side wall of the concave portion as one side.