The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2013
Filed:
Nov. 27, 2008
Jean Michel Reynes, Pompertuzat, FR;
Beatrice Bernoux, Tournefeuille, FR;
Rene Escoffier, Mauzac, FR;
Pierre Jalbaud, Segreville, FR;
Ivana Deram, Colomiers, FR;
Jean Michel Reynes, Pompertuzat, FR;
Beatrice Bernoux, Tournefeuille, FR;
Rene Escoffier, Mauzac, FR;
Pierre Jalbaud, Segreville, FR;
Ivana Deram, Colomiers, FR;
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A transistor power switch device comprising a semiconductor body presenting opposite first and second faces, an array of vertical field-effect transistor elements for carrying current between the first and second faces is provided. The array of transistor elements comprises at the first face an array of source regions of a first semiconductor type, at least one body region of a second semiconductor type opposite to the first type interposed between the source regions and the second face, at least one control electrode for switchably controlling flow of the current through the second transistor region, and a conductive layer contacting the source regions and insulated from the control electrode by at least one insulating layer.