The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2013
Filed:
Feb. 17, 2012
Satoru Itou, Hyogo, JP;
Hiromasa Fujimoto, Toyama, JP;
Susumu Akamatsu, Osaka, JP;
Toshie Kutsunai, Osaka, JP;
Satoru Itou, Hyogo, JP;
Hiromasa Fujimoto, Toyama, JP;
Susumu Akamatsu, Osaka, JP;
Toshie Kutsunai, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A semiconductor device includes a first and a second MIS transistor. The first and second MIS transistors include a first and a second gate electrode formed on a first and a second active region with a first and a second gate insulating film being formed therebetween, first and second sidewalls including a first and a second inner sidewall formed on side surfaces of the first and second gate electrodes and having an L-shaped cross-section, and first and second source/drain regions formed in the first and second active regions laterally outside the first and second sidewalls. The first source/drain regions include a silicon compound layer formed in trenches provided in the first active region and causes a first stress in a gate length direction of a channel region in the first active region. A width of the first inner sidewall is smaller than a width of the second inner sidewall.