The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2013
Filed:
Apr. 29, 2011
Applicants:
Kwang-wook Lee, Seongnam-si, KR;
Jae-jik Baek, Seongnam-si, KR;
In-seak Hwang, Suwon-si, KR;
Seok-woo Nam, Seongnam-si, KR;
Inventors:
Kwang-Wook Lee, Seongnam-si, KR;
Jae-Jik Baek, Seongnam-si, KR;
In-Seak Hwang, Suwon-si, KR;
Seok-Woo Nam, Seongnam-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/772 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device includes a semiconductor substrate having at least two oblique side surfaces and a first bottom surface in a recessed portion. A gate insulating layer is formed on the recessed portion. A gate electrode is formed on the gate insulating layer. A channel region is formed below the gate electrode. Gate spacers are formed on side surfaces of the gate electrode.