The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2013
Filed:
Feb. 07, 2006
Mikio Yukawa, Atsugi, JP;
Tamae Takano, Atsugi, JP;
Yoshinobu Asami, Atsugi, JP;
Shunpei Yamazaki, Setagaya, JP;
Takehisa Sato, Isehara, JP;
Mikio Yukawa, Atsugi, JP;
Tamae Takano, Atsugi, JP;
Yoshinobu Asami, Atsugi, JP;
Shunpei Yamazaki, Setagaya, JP;
Takehisa Sato, Isehara, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
It is an object of the present invention to provide a nonvolatile memory device, in which additional writing is possible other than in manufacturing and forgery and the like due to rewriting can be prevented, and a semiconductor device having the memory device. It is another object of the present invention to provide an inexpensive and nonvolatile memory device with high reliability and a semiconductor device. According to one feature of the present invention, a memory device includes a first conductive layer formed over an insulating surface, a second conductive layer, a first insulating layer interposed between the first conductive layer and the second conductive layer, and a second insulating layer which covers a part of the first conductive layer, wherein the first insulating layer covers an edge portion of the first conductive layer, the insulating surface, and the second insulating layer.