The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2013
Filed:
Dec. 29, 2009
Tea-kwang Yu, Hwaseong-si, KR;
Jeong-uk Han, Hwaseong-si, KR;
Yong-tae Kim, Hwaseong-si, KR;
Samsung Electronics Co., Ltd, Suwon-si, KR;
Abstract
A non-volatile memory device includes an active region in which a channel of a transistor is formed in a substrate, element isolation films defining the active region and formed on the substrate at both sides of the channel at a height lower than an upper surface of the active region, a first dielectric layer, a second dielectric layer, and a control gate electrode formed on the active region in this order, and a floating gate electrode formed between the first dielectric layer and the second dielectric layer so as to intersect the length direction of the channel and extend to the upper surfaces of the element isolation films at both sides of the channel, thereby surrounding the channel.