The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2013
Filed:
Dec. 17, 2008
Timothy a Rost, Plano, TX (US);
Timothy A Rost, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The present invention facilitates semiconductor device fabrication and performance by providing a semiconductor device that can improve channel mobility for both N type and P type transistor devices. The semiconductor device of the present invention is fabricated on a semiconductor substratethat has a first and second crystallographic orientation axes (e.g., <110>, <100>)andSource to drain channel regions for P type devices are formedand aligned along the first crystallographic orientation axis. Source to drain channel regions for N type devices are formedrotated from the channel regions of the P type devices by an offset angle so that the source to drain channel regions for the N type devices are aligned with the second crystallographic orientation axis. Subsequently, a uniaxial or biaxial tensile stressis applied to the source to drain channel regions of the N type devices and a uniaxial or biaxial compressive stressis applied to the source to drain channel regions of the P type devices.