The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2013
Filed:
Dec. 19, 2011
Yen-hsiang Fang, Taipei County, TW;
Chu-li Chao, Hsinchu, TW;
Chih-wei HU, Taoyuan County, TW;
Yih-der Guo, Hsinchu, TW;
Yen-Hsiang Fang, Taipei County, TW;
Chu-Li Chao, Hsinchu, TW;
Chih-Wei Hu, Taoyuan County, TW;
Yih-Der Guo, Hsinchu, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A nitride semiconductor substrate and a method for manufacturing the same are provided. The nitride semiconductor substrate includes a base material, a patterned nitride semiconductor, a protection layer, and a nitride semiconductor layer. The patterned nitride semiconductor layer is located on the base material and includes a plurality of nanorod structures and a plurality of block patterns, and an upper surface of the nanorod structures is substantially coplanar with an upper surface of the block patterns. The protection layer covers a side wall of the nanorod structure sand a side wall of the block patterns. The nitride semiconductor layer is located on the patterned nitride semiconductor layer, and a plurality of nanopores are located between the nitride semiconductor layer and the patterned nitride semiconductor layer.