The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 10, 2013

Filed:

Apr. 18, 2011
Applicants:

Wu-hsiung Lin, Hsinchu, TW;

Po-hsueh Chen, Taoyuan County, TW;

Shin-shueh Chen, Hsinchu County, TW;

Guang-ren Shen, Yunlin County, TW;

Jia-hong YE, Taipei County, TW;

Inventors:

Wu-Hsiung Lin, Hsinchu, TW;

Po-Hsueh Chen, Taoyuan County, TW;

Shin-Shueh Chen, Hsinchu County, TW;

Guang-Ren Shen, Yunlin County, TW;

Jia-Hong Ye, Taipei County, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 29/10 (2006.01); H01L 31/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A pixel structure and a manufacturing method thereof are provided. In the pixel structure, an electrode of a storage capacitor is formed when an active layer is formed, and the electrode and the active layer are made of the same material. The material of the electrode and the active layer can be an oxide semiconductor with high transmittance. Therefore, a stable display frame of the pixel structure can be provided by the storage capacitor, an aperture ratio of the pixel structure can be improved, and power consumption can be further reduced.


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