The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2013
Filed:
Feb. 10, 2011
Guy A. Cohen, Mohegan Lake, NY (US);
Steven A. Cordes, Yorktown Heights, NY (US);
Sherif A. Goma, White Plains, NY (US);
Joanna Rosner, Cortlandt Manor, NY (US);
Jeannine M. Trewhella, Peekskill, NY (US);
Guy A. Cohen, Mohegan Lake, NY (US);
Steven A. Cordes, Yorktown Heights, NY (US);
Sherif A. Goma, White Plains, NY (US);
Joanna Rosner, Cortlandt Manor, NY (US);
Jeannine M. Trewhella, Peekskill, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A process for overcoming extreme topographies by first planarizing a cavity in a semiconductor substrate in order to create a planar surface for subsequent lithography processing. As a result of the planarizing process for extreme topographies, subsequent lithography processing is enabled including the deposition of features in close proximity to extreme topographic surfaces (e.g., deep cavities or channels) and, including the deposition of features within a cavity. In a first embodiment, the process for planarizing a cavity in a semiconductor substrate includes the application of dry film resists having high chemical resistance. In a second embodiment, the process for planarizing a cavity includes the filling of cavity using materials such as polymers, spin on glasses, and metallurgy.