The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 10, 2013

Filed:

Oct. 26, 2010
Applicants:

Todd R. Bryden, Midland, MI (US);

Buford I. Lemon, Willow Grove, PA (US);

Joseph George, Midland, MI (US);

Rebekah Kristine-ligman Feist, Midland, MI (US);

Inventors:

Todd R. Bryden, Midland, MI (US);

Buford I. Lemon, Willow Grove, PA (US);

Joseph George, Midland, MI (US);

Rebekah Kristine-Ligman Feist, Midland, MI (US);

Assignee:

Dow Global Technologies LLC, Midland, MN (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/40 (2006.01);
U.S. Cl.
CPC ...
Abstract

A layer of an n-type chalcogenide compositions including at least cadmium that is provided on a substrate in the presence of an oxidizing gas in an amount sufficient to provide a resistivity to the layer that is less than the resistivity a layer deposited under identical conditions but in the substantial absence of oxygen. Such n-type chalcogenide compositions are particularly useful in the making of photovoltaic devices.


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