The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 03, 2013

Filed:

Nov. 09, 2009
Applicants:

Hiroaki Takechi, Hadano, JP;

Norio Takahashi, Hiratsuka, JP;

Wataru Kiyosawa, Hiratsuka, JP;

Shigenao Maruyama, Miyagi, JP;

Atsuki Komiya, Miyagi, JP;

Inventors:

Hiroaki Takechi, Hadano, JP;

Norio Takahashi, Hiratsuka, JP;

Wataru Kiyosawa, Hiratsuka, JP;

Shigenao Maruyama, Miyagi, JP;

Atsuki Komiya, Miyagi, JP;

Assignees:

Kelk Ltd., Hiratsuka-shi, JP;

Tohoku University, Sendai-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 19/00 (2011.01);
U.S. Cl.
CPC ...
Abstract

When a temperature of a semiconductor wafer is controlled to be a target temperature by raising the temperature of the semiconductor wafer, switching is performed so that a high-temperature circulating liquid at a temperature higher than the target temperature in a high-temperature tank is supplied into an inside-stage flow channel, and respective thermoelectric elements in a plurality of zones in a stage are controlled; and then, the temperature of the semiconductor wafer matches the target temperature and a desired in-plane temperature distribution of the semiconductor wafer is provided.


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