The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2013
Filed:
May. 22, 2007
Masahiko Furuichi, Yokkaichi, JP;
Seiji Takahashi, Yokkaichi, JP;
Masahiko Furuichi, Yokkaichi, JP;
Seiji Takahashi, Yokkaichi, JP;
Autonetworks Technologies, Limited, Mie, JP;
Sumitomo Wiring Systems, Limited, Mie, JP;
Sumitomo Electric Industries, Limited, Osaka, JP;
Abstract
A first current corresponding to the drain-to-source voltage of a power MOSFET can pass through an FET; and a second current corresponding to a constant voltage can pass through an FET; a third current corresponding to the difference determined by subtracting the first current from the second current can pass into threshold setting resistors from the connecting point between FETs. Consequently, divided voltages at the connecting points between the threshold setting resistors varies directly with a voltage corresponding to the difference determined by subtracting the drain-to-source voltage of the power MOSFET from the constant voltage.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile