The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8598706 B1

PDF
Full Text
Expired
Date of Patent:
Dec. 03, 2013

Filed:

Sep. 17, 2008
Applicants:

Hironori Yamamoto, Tokyo, JP;

Fuminori Ito, Tokyo, JP;

Yoshihiro Hayashi, Tokyo, JP;

Inventors:

Hironori Yamamoto, Tokyo, JP;

Fuminori Ito, Tokyo, JP;

Yoshihiro Hayashi, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for forming an interlayer dielectric film by a plasma CVD method, including turning off a radio frequency power and purging with an inert gas simultaneously.


Find Patent Forward Citations

Yamamoto, Hironori. (2013). Method for forming interlayer dielectric film, interlayer dielectric film, semiconductor device and semiconductor manufacturing apparatus (U.S. Patent No. 8598706). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8598706

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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